What is V10 BV-NAND and what makes it different?

V10 BV-NAND is Samsung's next-generation V-NAND technology. It has an ultra-high-layer architecture with more than 400 layers and uses bonding vertical technology plus a three-stack structure to increase capacity while reducing power use and heat.

How does LPDDR5X-PIM improve memory performance?

LPDDR5X-PIM is a low-power DRAM product that integrates processing-in-memory into LPDDR5X memory. By processing data inside the memory, it reduces data movement and improves performance and power efficiency.

Samsung Electronics wins 2 awards at int'l chip conference

Q: What awards did Samsung Electronics win at the Future of Memory and Storage 2026 conference?

Samsung Electronics won the 3D & NAND Innovation Award for V10 BV-NAND and the Next-Gen Memory Award for LPDDR5X-PIM. The awards were given at the annual conference in California.

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Summary

Samsung Electronics won two awards at the Future of Memory and Storage 2026 conference in California for its next-generation memory technologies. It received the 3D & NAND Innovation Award for V10 BV-NAND and the Next-Gen Memory Award for LPDDR5X-PIM. The company said the technologies are aimed at boosting storage capacity, performance and power efficiency for AI accelerators and high-performance computing systems.

Key Facts

V10 BV-NAND features an ultra-high-layer architecture with more than 400 layers.
The technology uses bonding vertical technology and a three-stack structure that connects V-NAND cells across three layers.
LPDDR5X-PIM is described as the world's first low-power DRAM product to integrate processing-in-memory technology into LPDDR5X memory.

By Yonhap

Published Aug 6, 2026 9:54 am KST

Samsung Electronics' Executive Vice President and Head of Flash Product & Technology Lee Jin-yub, right, receives awards at the Future of Memory and Storage (FMS) 2026 conference held in Santa Clara, California, Tuesday (local time). Yonhap

Samsung Electronics said Thursday it has won two awards at an annual international semiconductor conference in recognition of its next-generation memory technologies.

The Korean tech giant received the 3D & NAND Innovation Award for its V10 BV-NAND technology and the Next-Gen Memory Award for its LPDDR5X-PIM technology at the Future of Memory and Storage 2026 conference held in California.

V10 BV-NAND is Samsung's next-generation V-NAND technology featuring an ultra-high-layer architecture with more than 400 layers.

It employs bonding vertical technology, which vertically bonds wafers, along with a three-stack structure that connects V-NAND cells across three layers, increasing storage capacity while reducing power consumption and heat generation.

LPDDR5X-PIM is the world's first low-power DRAM product to integrate processing-in-memory technology into LPDDR5X memory.

By enabling data processing directly within the memory, it minimizes data movement, improving both performance and power efficiency.

The technology is expected to play a key role in AI accelerators and high-performance computing (HPC) systems, the company said.

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