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| Samsung Electronics' third-generation 10nm-class DRAM / Courtesy of Samsung Electronics |
By Jun Ji-hye
Samsung Electronics has completed development of a third-generation 10-nanometer-class (1z-nm) eight-gigabit double data rate 4 (DDR4) DRAM for the first time in the world, the firm announced Thursday.
This comes just 16 months after it began mass production of the second-generation 10nm-class (1y-nm) eight-gigabit DDR4 DRAM.
The world's largest memory chip maker said it is now capable of responding better to global demand with the new DRAM as 1z-nm becomes the industry's smallest memory process node.
The new product's productivity is more than 20 percent higher compared to previous chips.
Following full validation with a CPU manufacturer for eight-gigabyte DDR4 modules, Samsung will push for active collaboration with global customers to deliver an array of memory products, the firm said.
According to market researcher IHS, Samsung Electronics took the top position in the global DRAM market in the third quarter of last year, with a 43.4 market share. SK hynix was ranked second with 29.1 percent, and Micron was third with 23 percent.
Samsung began mass-producing the second-generation 1y-nm DRAM in November 2017, while SK hynix finished the development of the product in November last year and plans to begin mass production in the second half of this year. Micron has reportedly finished the development of the second-generation product recently.
Industry officials said with the development of the third-generation product, Samsung has proven to be more than a year ahead of its competitors in advancing technologies.
The tech company said it plans to begin mass-producing the third-generation DRAM in the second half of the year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.
"Our commitment to break through the biggest challenges in technology has always driven us toward greater innovation," said Lee Jung-bae, an executive vice president of DRAM product and technology at Samsung Electronics. "We are pleased to have laid the groundwork again for stable production of the next-generation DRAM that ensures the highest performance and energy efficiency.
"As we build out our 1z-nm DRAM lineup, Samsung is aiming to support its global customers in their deployment of cutting-edge systems and enabling the proliferation of the premium memory market."
Samsung noted that its development of the 1z-nm DRAM will pave the way for an accelerated global IT transition to next-generation DRAM interfaces.
The new product with a higher capacity and performance will also allow Samsung to strengthen its business competitiveness and solidify its leadership in the premium DRAM market for servers, graphics and mobile devices, the firm added.
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